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C-RAM – chalcogenide random access memory
The 256K x 8 and 512K x 8 radiation-hardened C-RAM™ are high-performance, random-access, non-volatile memory with industry-standard functionality.
The C-RAM is fabricated with BAE Systems’ radiation-hardened technology, and is designed for use in systems operating in radiation environments. The C-RAM operates over the -40C to +110C temperature range and requires a single 3.3 V ±10% power supply; power consumption is typically less than 20 mW/MHz in operation.
The C-RAM is available with CMOS-compatible I/O. Software data protection is implemented using the JEDEC-optional standard algorithm. Power consumption is typically less than 20 mW/MHz in operation. The C-RAM read operation is fully asynchronous, with an associated typical read access time of less than 70 nanoseconds and write-access time of less than 1000 nanoseconds.
BAE Systems’ enhanced bulk CMOS technology is radiation-hardened through use of advanced and proprietary design, layout, and process-hardening techniques. Chalcogenide OUM™ technology is licensed from Ovonyx Inc.; OUM is a trademark of Ovonyx Inc.
For more information, please contact:
Brian Orlowsky
9300 Wellington Road
Manassas, Viginia 20110
+1 703 367 2692
brian.orlowsky@baesystems.com
Further information
Attachments
- Radiation-hardened C-RAM 2Mb brochure
- 70 KB [pdf]
- Radiation-hardened C-RAM 4Mb brochure
- 72 KB [pdf]
- C-RAM NMVTS
- 222 KB [pdf]
- C-RAM advertisement
- 290 KB [pdf]
