Millennium – Radiation-Hardened SRAM

The Millennium high-speed SRAM family is the fourth generation in a long line of BAE Systems radiation-hardened static RAM products.

The Millennium SRAM die is a high-performance 524,288 word x 8-bit static random-access memory with industry-standard functionality. It is designed by BAE Systems for use in systems operating in strategic radiation environments and commercial space applications.

The Millennium SRAM is offered in three configurations: a 512 K x 8 single-chip module, a 512 K x 32 multi-chip module, and a 512 K x 40 multi-chip module. The RAM operates over the full military temperature range, and requires a single 2.5 V ± 5 percent power supply.

The SRAM also can be operated with dual voltage to allow interfacing with 3.3 V I/O. Power consumption is typically less than 25 mW/MHz in operation, and less than 15 mW in the low-power disabled mode for the single-chip version. The SRAM read operation is fully asynchronous, with an associated typical access time of 15 nanoseconds.

BAE Systems’ products are radiation-hardened through the use of advanced and proprietary design, layout, and process hardening techniques. The Millennium SRAM family has a total dose tolerance of greater than 200 krads and an upset rate of less than 1E-10 upsets per bit day.

• P/N 251A136 – 512 K x 8 SRAM
• P/N 251A172 – 512 K x 32 SRAM
• P/N 251A137 – 512 K x 40 SRAM

 

For more information, please contact:

Brian Orlowsky
9300 Wellington Road
Manassas, Virginia 20110
+1 703 367 2692
brian.orlowsky@baesystems.com