Monolithic 16 Mbit Radiation-Hardened SRAM

The 16 Mb Monolithic high-speed SRAM family is the fifth generation of a long line of BAE Systems radiation-hardened static RAM products.

The 16 Mb Monolithic SRAM die is a high-performance 2,097,152-word x 8-bit static random-access memory with industry-standard functionality. It is designed by BAE Systems for use in systems operating in strategic radiation environments and commercial space applications.

The 16 Mb Monolithic SRAM is offered in three configurations: a 2 M x 8 single-chip module, a 2 M x 32 multi-chip module, and a 2 M x 40 multi-chip module. The SRAM operates over the full military-temperature range, and requires a single 1.5 V ± 5 percent power supply. It can also operate with dual voltage to allow interfacing with 3.3 V I/O.

Power consumption is typically less than 10 mW/MHz in operation, with a standby power of less than 100 mW. The SRAM read operation is fully asynchronous, with an associated access time of 15 to 20 nanoseconds.

BAE Systems’ products are radiation-hardened through the use of advanced and proprietary design, layout, and process hardening techniques. The 16Mb Monolithic SRAM has a total dose tolerance of greater than 1 Mrad, and an upset rate of less than 1E-12 upsets per bit day.

In late 2008, BAE Systems will offer the 16Mb Monolithic SRAM in a 512K x 32 organization.

Product list:

• P/N 8407074 – 2 M x 8 SRAM
• P/N 8427352 – 512 K x 32 SRAM
• P/N 8413764 – 2 M x 40 SRAM

 

For more information, please contact:

Brian Orlowsky
9300 Wellington Road
Manassas, Virginia 20110
+1 703 367 2692
brian.orlowsky@baesystems.com