Radiation-Hardened Memory

BAE Systems’ radiation-hardened memory products leverage years of expertise in the development of advanced semiconductor technology and packaging approaches to provide memory solutions for the missile defense and space communities.

BAE Systems has developed two complimentary products to address the critical non-volatile memory requirements for missile defense and space systems. The 256 Kb programmable read-only memory has been on the market for 10 years and uses proven antifuse technology. The other, newest products are the 2 Mb and 4 Mb chalcogenide random access memoryTM non-volatile RAMs. These products use the chalcogenide phase change material to provide a dense and fast replacement for electrically-erasable programmable read-only memory. This feature opens up new applications that were not feasible until now. BAE Systems is now taking orders for engineering- and flight-model parts.

BAE Systems also offers a number of options for radiation-hardened static random access memory (SRAM), including a 4 Mb radiation tolerant SRAM named Millennium, and a 4 Mb radiation-hardened SRAM called Magnum. BAE Systems has developed a monolithic 16 Mb SRAM and an L2 cache and synchronous SRAM, which provides unique performance for certain processing architectures, and a high performance L2 cache to support the RAD750® microprocessor. 

 

For more information, please contact:

Brian Orlowsky
+1 703 367 2692
brian.orlowsky@baesystems.com