A uniform, fine-grained microstructure characterizes BAE Systems Pressure Assisted Densified ("PAD") Silicon Carbide (SiC). BAE Systems produces three grades of SiC with diameters up to 560mm. Precise processing, and unique grain boundary chemistry allows for the control of material grain size and grain size distribution in these materials. ADVANCED CERAMICS SiC-N with its high hardness, fracture toughness and Weibull modulus results in a ballistically superior ceramic armor which also is excellent for optical, structural and wear resistant applications.
BAE Systems SC-1R material is a high purity fine grained SiC appropriate for the optical and semiconductor industries. All of BAE Systems's SiC are excellent in a variety of environments up to 1650°C. The following chart lists typical properties:
| Grade of SiC | SiC-B | SiC-N | SC-1R | |
| Bulk Density (min) | g/cm^3 | 3.20 | 3.20 | 3.20 |
| Average Grain Size |
μm |
3-5 | 3-5 | 1.5-3.0 |
| Flexural Strength, (4-Pt MOR) | Ksi | 70 | 85 | 100 |
| @RT | MPa | 580 | 570 | 700 |
| Characteristic Strength | MPa | 600 | 600 | 730 |
| Weibull Modulus (m) | 17 | 21 | 10 | |
| Elastic Modulus (E) | GPa | 460 | 460 | 460 |
| Poisson's Ratio (v) | 0.16 | 0.16 | 0.15 | |
| Hardness (Knoop 0.3 kg) | kg/mm^2 | 2400 | 2400 | 2400 |
| Fracture Toughness (Chevron Notch) | MPa-m^1/2 | 4.4 | 4.7 | 4.5 |
| Thermal Expansion (RT-1000°C) | 10^-6°C | 4.5 | 4.5 | 4.5 |
| Thermal Conductivity @RT | (W/m-K) | 130 | 130 | 95 |
| Electrical Resistivity |
Ω-cm |
>10^4 | >10^4 | >10^4 |
